西门子PLC与计算机间的通讯程序设计

介绍了西门子（Siemens）公司生产的S7－200型PLC与计算机之间的通讯网络构成及主要通讯指令，说明了利用PLC进行通信的实质和设计步骤，给出了PLC与计算机通讯时上位机和下位机的相应程序。     

Growth and characterization of GaAs films deposited on Ge/Si composite substrates by metalorganic chemical vapor deposition

We report the results of studies which have been made on heteroepitaxial layers of GaAs and AlGaAs grown by metalorganic chemical vapor deposition on composite substrates that consist of four different types of heteroepitaxial layered structures of Ge and Ge-Si grown by molecular beam epitaxy on (100)-oriented Si substrates. It is found that of the four structures studied, the preferred composite substrate is a single layer of Ge ∼1 μm thick grown directly on a Si buffer layer. The double-crystal X-ray rocking curves of 2 μm thick GaAs films grown on such substrates have FWHM values as small as 168 arc sec. Transmission electron micrographs of these Ge/Si composite substrates has shown that the number of dislocations in the Ge heteroepitaxial layer can be greatly reduced by an anneal at about 750° C for 30 min which is simultaneously carried out during the growth of the GaAs layer. The quality of the GaAs layers grown on these composite substrates can be greatly improved by the use of a five-period GaAs-GaAsP strained-layer superlattice (SLS). Using the results of these studies, low-threshold optically pumped AlGaAs-GaAs DH laser structures have been grown by MOCVD on MBE Ge/Si composite substrates.     

Si衬底上横向外延GaN材料的微结构和光学性质的研究

用氢化物气相外延 (HVPE)方法在Si(III)衬底上成功横向外延生长出晶体质量较好的GaN薄膜材料。透射电子显微镜 (TEM )的研究结果表明 ,横向外延区域GaN的位错密度明显减小。由于SiO2 掩膜腐蚀角的不同 (分别为 90°和 6 6°) ,导致了横向外延GaN材料一些独特的微观形貌。微区拉曼光谱由数百条拉曼散射曲线组成 ,每一条曲线有三个振动模 ,分别对应Si振动模式 (5 2 0cm- 1) ,E2 模式 (5 6 6cm- 1)和E1(LO)模式(732cm- 1)。在垂直条纹方向 ,峰位和峰宽没有明显的变化 ,而峰强约 5 μm会发生周期性变化     

In Situ Formation of a Novel Nanocomposite Structure Based on MCM-41 and Polyethylene

M41S materials are prepared by in situ assembly of inorganic precursors and organic template and can be viewed as nanocomposites of the siliceous phase and organic surfactant. Calcination of these precursors gives the M41S materials that have been used to prepare novel nanocomposite structures, in which the organic phase inside the nano-sized pores is isolated by the nano-sized inorganic pore walls. The nanocomposite structures can be formed by in situ polymerization of monomers inside the channels. Polymerization of ethylene takes place inside the nano-sized pores, producing the desired nanocomposite structure. The resulting polyethylene was found to be a mixture of crystalline and amorphous phases.     

PIC单片机在中央空调控制器中的应用

基于PIC 16F877/16C74单片机，设计了一种能满足用户尺寸要求的中央空调控制器。     

从加氢脱硫（HDS）循环气中脱除H2S和C1—C4组分

简要介绍了炼油厂生产低硫燃料过程中处理循环氢气物流中的H2 S和轻质烃的几种方法 ,并通过实验对比论述非水溶型硫回收技术可降低氢气损失、增大轻质烃脱除率的优越性     

基于B/S模式的汽车零件销存管理信息系统的设计与实现

对于采用连锁经营的汽车零件销售企业来说,各经营网点分布在同一城市的不同区域或不同城市,为了在充分利用原有信息和资源的基础上处理好许多中间环节,减少人员工作量,保证企业销存状态良好,提高管理效率,设计了基于B/S模式的汽车零件销存管理信息系统的技术方案,详细讨论系统的功能设计以及实现技术。     

湿H2S环境中金属材料腐蚀的研究

介绍了在湿H2S环境中金属材料的腐蚀试验标准、方法和手段并重点强调了在H2S试验过程中常遇到的一些问题的处理方法.最后,指出了应加强H2S腐蚀的基础性和系统性研究的研究方向.     

RE／S值对控轧低碳Mn－Nb－RE钢硫化物成分和形貌的影响

用扫描电镜测定了含０．０４１％～０．０７６％ＲＥ的低碳Ｍｎ－Ｎｂ－ＲＥ钢中硫化物的成分、大小和形貌。ＲＥ／Ｓ值为２．８～３．０时，钢中的硫化物充分变质。     

Luminescence Characterization of Mg Doped Y2O2S:Ti Long Afterglow Phosphor

Y1.94-xMgxO2S:0.06Ti (0≤x≤0.10) phosphors with long afterglow were synthesized by solid state reaction route. The photoluminescence spectra, decay curves, thermoluminescent spectra and chromaticity coordinate curves were investigated. The results show that the luminescence intensity of Y1.94-xMgxO2S:0.06Ti (0≤x≤0.10) phosphors decrease gradually with increasing Mg2 ion content, and the shape of luminescence spectra and chromaticity coordinate change as well. Furthermore, two thermoluminescent peaks in single Ti-doped Y2O2S sample are found at 91.8 and 221.5 ℃, respectively. Nevertheless, significant different spectra were found for the Mg, Ti co-doped Y2O2S samples that three thermoluminescence peaks appear at 52.3, 141.7 and 226.8 ℃, respectively. These results indicate that the co-doped Mg ion changes the inherent trap depth of single Ti-doped Y2O2S:Ti phosphor, and induces simultaneously a new trap level in the Y1.94-xMgxO2S:0.06Ti phosphor. Based on the analysis of thermoluminescent spectra, photoluminescent spectra, decay curve and crystal structure defect, it was proposed that the varied structure defect and introduced new trap level by the doped Mg2 ions should be responsible for reducing luminescence intensity and varying color in the Y1.94-xMgxO2S:0.06Ti phosphor.